Abstract
Semiconducting diamond has received significant attention as a material for use in power devices owing to its high breakdown characteristics and high carrier mobility in high-temperature, high-voltage environments. Several research groups have postulated that the density of defects is a critical issue for the development of high-performance devices. In addition, they have suggested that a high-quality crystal with a flat surface and a low defect density is required for achieving high and stable performance.In this study, we investigated the reverse leakage current of some Schottky barrier diodes and the defect distribution in the area of each Schottky electrode by using X-ray topography.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
