Abstract
Dislocation generation in the initial stage of Czochralski-grown Si crystals doped with B in various concentrations was observed by means of X-ray topography. Slip dislocations were generated due to the thermal stress at the dipping stage in the seed and in a crystal doped with B in the concentration lower than 1×10 18 cm −3. Misfit dislocations were generated and penetrated into the crystal when the difference of B concentration between the seed and crystal was higher than ≈8×10 18 cm −3.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
