X-ray study of silicon distortion on deposition of diamond-like films

Abstract

Diamond films are of special interest for passivation, because of their chemical stability and electric characteristics. However, the problem of about crystal surface distortion on film deposition is crucial for microelectronics applications. An X-ray study of radiation defects created in the silicon subsurface region during ion plasma etching and covering the crystal with diamond-like carbon films has been carried out. The distorted layer thickness (several nanometres) has been determined to be close to the ion penetration depth and the main radiation defects near the crystal surface turn out to be interstitial like. It has been found that the silicon crystal surface under the diamond-like film, deposited by magnetron sputtering of graphite in argon at the optimal bias voltage equal to -100 V, is very smooth on an atomic scale (the damaged layer thickness was equal to 3.7 Å).