X-ray study of antiphase boundaries in the quadruple-period ordered GaAs0.87Sb0.13 alloy

Abstract

The x-ray diffraction intensity from antiphase boundaries (APBs) in a quadruple-period ordered GaAsSb alloy is derived introducing statistical probabilities for these APBs and their associated phase shifts. Through experimental fits, we obtain an average distance between the neighboring APBs of approximately 130, 400, and 5 nm along [110], [−110], and [001] directions, respectively. The short distance along the [001] growth direction leads to a narrow streak along [001] in an intensity contour map. In addition, we find that the APBs broaden the ordering peaks, while their effect on the intensity ratio between the ordering peaks is negligible. Static atomic displacements, associated with bond length disparities are also included in the calculations.