Abstract
A new X-ray method was proposed to measure the triaxial residual stress in Al thin films sputtered on (100)-oriented silicon single-crystal wafers. The film had [111] fiber texture perpendicular to the film. The linear relation between strain and sin2 ψ obtained from Al 222 and 311 diffractions was used to determine the triaxial residual stress in Al films. The residual stress in Al films was equibiaxial tension, and the magnitude decreased with increasing film thickness. The residual stress determined by the curvature method was nearly equal to that determined by X-ray analysis. The loading stress in Al-coated film was found to be biaxial even under uniaxial tension of Si substrate. The stress value measured by the X-ray method agreed with the prediction based on the mismatch of Poisson's ratio between coating and substrate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
