X-ray standing waves in the Laue case – location of impurity atoms

Abstract

Impurity-atom fluorescence excited by X-ray standing waves in the Laue case of X-ray diffraction has been investigated experimentally and theoretically. Possibilities for location of impurity atoms in the bulk and the surface layer of single crystals are discussed. The experiments were carried out on silicon crystals of different thicknesses doped with germanium. The general approach for calculation of the fluorescence-yield angular curves has been developed. In the case of the uniform distribution of impurity atoms in the bulk of a crystal and also in the case of the kinematical X-ray diffraction on a thin surface layer, analytical expressions can be used.