Abstract
Perfect crystal silicon samples implanted with 60 KeV Bi atoms along the [110] surface normal direction were analyzed with X-ray standing waves. Two reflection orders, (220) and (440) were used with synchrontron radiation to study systematically the impurity distribution function at 5 different doses ranging from 0.6 to 10×1014 Bi atoms/cm2. The analysis reveals the substitutional Bi position connected with a lattice expansion and the formation of precipitates at higher Bi doses as well as estimates for the Bi vibrational amplitude.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
