Abstract
Using a 55Fe source we characterized the spectroscopic performance of a matrix of Silicon Drift Diodes (SDDs). The matrix consists of a completely depleted volume of silicon wafer subdivided into five identical hexagonal cells. The back side is composed of five implanted arrays of increasingly negatively biased concentric p+ rings. The front side, common to all five cells, is a uniformly implanted p+ entrance window. Ionizing radiation impinging the detector bulk generates electrons that drift towards small readout n+ pads placed on the back side at the center of each cell. The total sensitive area of the matrix is 135mm2, the wafer thickness is 450μm. We report on the layout of the experimental set-up, as well as the spectroscopic performance measured at different temperatures and bias conditions.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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