Abstract
The structural properties and features of the chemical composition of SiO x N y /SiO2, SiO x N y /Si3N4, and SiN x /Si3N4 multilayer thin films with ultrathin (1–1.5 nm) barrier SiO2 or Si3N4 layers are studied. The films have been prepared by plasma chemical vapor deposition and have been annealed at a temperature of 1150°С for the formation of silicon nanocrystals in the SiO x N y or SiN x silicon-rich layers with a nominal thickness of 5 nm. The period of superlattices in the studied samples has been estimated by X-ray reflectivity. The phase composition of superlattices has been studied by X-ray electron spectroscopy using the decomposition of photoelectron spectra of the Si 2p, N 1s, and O 1s levels into components corresponding to different charge states of atoms.
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