Abstract
In this work, X-ray triple-axis diffractometry (TAD) and synchrotron radiation double-crystal topography (SRDT) have been utilized to investigate strained-Si/Si1-xGex on bonded SOI. The structural characteristics of the Si capping layer and the underlying Si layers (the Si buffer and SOI top Si layer) have been described using high resolution reciprocal lattice mapping (HRRLM). The mosaicity in the SiGe layer leads to (004) diffraction peak broadening asymmetrically. The crosshatched contrast spatially correlated with the misfit dislocations (MDs) has been observed both in the SiGe layer and the underlying Si layers. The granular pattern due to the mosaic blocks is also shown in the topograph of the SiGe layer. It is argued that the compressive strain in the SiGe layer has been primarily released at the interface between the SiGe layer and the underlying Si layers.
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