Abstract
Structural properties of GaN/GaAlN multiple quantum wells (MQW) grown by nitrogen plasma assisted MBE on MOCVD-grown GaN/sapphire (GaN pseudosubstrates) have been characterised by X-ray reciprocal lattice mapping to determine the strain and composition of ternary alloys. The results clearly demonstrate that the barriers of GaAlN with up to 17% of aluminium content grown by plasma assisted MBE on GaN are fully strained. Optical properties have been characterised by low temperature photoluminescence. Photoluminescence emission peaks corresponding to the GaN/GaAlN MQW structures revealed strong red-shift with respect to the GaN energy gap. This can be explained by a strong internal electric field present in the QW's which is attributed to a transfer of piezoelectric field due to Fermi-level alignment.
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