X-ray photoemission study of the initial oxidation of the cleaved (110) surfaces of GaAs, GaP and InSb

Abstract

The room temperature oxidation of GaAs, GaP and InSb upon exposure to atmospheric dry O 2 has been studied by analyzing XP spectra quantitatively. The rate of oxidation decreases in the order InSb > GaP > GaAs. For GaAs and GaP, evidences of the formation of metastable surface complex are shown: the ratio of A IIIO bonds to B VO bonds are about 2 and 1, respectively. For InSb, it is shown that both elements are oxidized to comparable extent, giving rise to In 2O 3 and Sb 2O 3 probably, by using Auger spectra as well as photoemission spectra.