Abstract
Thin films of TiN were deposited from TiCl4, NH3, and H2 in a lamp heated single wafer “warm wall” low pressure chemical vapor deposition reactor. The deposition was carried out on a TiSi2/Si sample. The thickness of the films is estimated to be 100 nm. The films were analyzed by x-ray diffraction, Rutherford backscattering spectroscopy, and x-ray photoelectron spectroscopy. The XPS data in Ti 2p, N 1s, Ti L3M23V, and Ti L3M23M23 regions are presented.
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