Abstract
Abstract More than fifty specimens of silicon-oxygen compounds have been studied by X-ray photoelectron spectroscopy. Due to the insulating properties of these specimens the measured binding energies of the various atomic levels were corrected using the C (1 s ) line due to hydrocarbon contamination as a reference. A statistical treatment of the experimental results has been used to verify the validity of the reference and to discuss the differences in binding energy of the Si (2 p ) line in various samples. Three different steps of oxidation have been found for silicon; the chemical shifts with respect to unoxidised silicon are 3.2, 4.1 and 5.0 eV for surface oxidised silicon, silicates and quartz, respectively. The influence of atoms other than oxygen in the neighbourhood of silicon, such as fluorine or alkaline cations is discussed.
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