Abstract
The difference in the chemical reactions between Si/Pt/GaAs and Pt/Si/GaAs systems have been investigated using x-ray photoelectron spectroscopy. For the Si/Pt/GaAs system, annealing at 450 °C leads to out-diffusion of Ga and As atoms to the surface of the deposited film. On the other hand, for the Pt/Si/GaAs system, no Ga and As atoms out-diffuse to the surface. This indicates that the interface at GaAs is more stable for the Pt/Si/GaAs system than for the Si/Pt/GaAs system. The difference in these interfacial reactions is due to the difference in chemical states of Pt atoms when Pt atoms come in contact with GaAs.
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