Abstract
We report characterization of highly conducting and amorphous osmium dioxide thin films. The films deposited by glow discharge of osmium tetroxide showed no peaks in X-ray diffraction and homogeneous distribution of osmium and oxygen atoms in depth profile by Auger electron spectroscopy. The amorphous Os–O films were highly conducting (<5×10 −3 Ω cm), and the conductivity was almost temperature independent. High-resolution X-ray photoelectron spectroscopy revealed that the films were osmium dioxide (OsO 2). Argon ion bombardment of the film reduced the Os 4+ to metal Os 0 via a transition state (Os 1.6+).
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