Abstract
MgO and SiO2 are the natural oxide layer on the surface of Mg2Si and the excellent gate dielectric layer materials. MgO/Mg2Si and SiO2/Mg2Si heterojunctions were successfully prepared by magnetron sputtering. The valence band offset (VBO) and conduction band offset (CBO) of the two heterojunctions were measured by X‐ray photoelectron spectroscopy (XPS) method, and the values were 2.64 and 3.90 eV for MgO/Mg2Si and 3.24 and 4.43 eV for SiO2/Mg2Si, respectively. Different degree of band bending occurs on the two interfaces. As a result, the band diagrams of the both interfaces are all Type‐I (Straddled) band alignment. Such high VBO and CBO can provide suitable barrier heights for both electrons and holes (>1 eV); therefore, both MgO and SiO2 can be suitable candidates for the preparation of Mg2Si‐based thin film transistors.
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