Abstract
InP was oxidized chemically (in boiling deionized water), thermally (dry oxygen, 260°C, 30 min) and chemically under light illumination from a xenon arc lamp. The chemical compositions and their depth distributions from the surface of these oxides as well as the InP native oxide (naturally grown) were studied by angle-resolved X-ray photoelectron spectroscopy (XPS) and XPS combined with in situ Ar+ ion etching. In any oxide, indium is first oxidized to form In2O3 perhaps due to depletion of phosphorus from the InP surface induced by contact annealing, etc. InPO3 and/or InPO4 are then successively grown on an In2O3 or In2O3 rich layer. In and P atoms diffuse through the already grown In2O3 layer and react with oxidant at the surface to form InPO3 and/or InPO4. Light illumination was found to strongly enhance oxidation of InP, and substantially increase InPO3 and InPO4.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
