Abstract
The paper presents the X-ray photoelectron spectra (XPS) of the valence band (VB) and of the principal core levels from the (110) and (001) crystal surfaces for the quasi-one-dimensional high permittivity SbSeI single crystal isostructural to ferroelectric SbSI. The XPS were measured with monochromatized Al Ka radiation in the energy range of 0‐1400 eV at room temperature. The VB is located from 1.6 to 20 eV below the Fermi level. Experimental energies of the VB and core levels are compared with the results of theoretical ab initio calculations of the molecular model of the SbSeI crystal. The electronic structure of the VB is revealed. Shifts in the core-level binding energies of surface atoms relative to bulk ones, which show a dependency on surface crystallography, have been observed. The chemical shifts of the core levels (CL) in the SbSeI crystal for the Sb, I and Se states are obtained.
Highlights
At present X-ray photoelectron spectroscopy (XPS) is widely used for investigating solids
XPS studies revealed a splitting of the core levels (CL) in the incommensurate phase of the ferroelectric semiconductor TlInS2 [5]
The purpose of this paper is to study XPS of the isostructural to SbSI non-ferroelectric SbSeI crystal, to discuss the form and the electronic structure of the valence band (VB) and to reveal how the CL splitting is related to different valence states of the surface and bulk atoms, and to the quasi-onedimensionality of these crystals
Summary
At present X-ray photoelectron spectroscopy (XPS) is widely used for investigating solids. Due to the reduced co-ordination number, surface atoms have a potential different from the bulk atoms. XPS studies revealed a splitting of the CL in the incommensurate phase of the ferroelectric semiconductor TlInS2 [5]. SbSI, is a well-known quasi-one-dimensional ferroelectric semiconductor, which exhibits a number of prominent strongly coupled semiconductive and ferroelectric properties [6]. XPS studies [7] of the SbSI single crystals revealed a huge crystallographic planedependent splitting (∼ 3 ÷ 5 eV) of the CL due to the different valence state of surface and bulk atoms. The valence band (VB) and CL of this quasi-one-dimensional ferroelectric are extremely sensitive to the changes of the chemical environment of atoms
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