Abstract

The control of impurities at each stage of the purification process of Si is the primary topical problem in Si technology. The technique of determining the impurity composition should be multi-element and with low limit-detection of impurities. From this point of view, X-ray analysis of the phase composition of Si, based on the identification of X-ray diffraction lines is very attractive. Obtaining of Si directly from MG-Si is essential to reveal the physical possibilities of the directional crystallization. In this work, there are considered the options on a set of detectable impurities and the limits of their detection in such type of Si by X-ray diffraction method. It has been shown, that applicability of X-ray analysis of the phase composition of Si, based on the identification of X-ray diffraction lines, depends on the stage of Si purification.

Highlights

  • Silicon is the main component of the modern efficient semiconductor devices including micro, opto, nanoelectronics

  • Silicon has many advantageous properties like the high photo and low temperature sensitivity, minimal reflection losses, the 85 % of solar batteries are made from silicon

  • Initial experimental material of metallurgical silicon with 98.30 wt.% Si and undesirable impurities up to ~2 wt.% is the first step product of Si obtained by restoration from quartzite with reaction to carbon

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Summary

Introduction

Silicon is the main component of the modern efficient semiconductor devices including micro-, opto-, nanoelectronics. Сrystals have been grown from quartz crucible as described in our previous work.[6]

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