Abstract
Using X-ray microdiffraction with a focused beam size of about 0.4 × 1.0 μm2, we investigated the strain relaxation and crystallinity of Ge thin films with areas of 2 × 2 μm2 and 250 × 250 μm2 grown on Si (001) substrates with SiO2 standard shallow-trench-isolation patterning. Results showed slower progression of strain relaxation in the 2 × 2 μm2 Ge films compared to the 250 × 250 μm2 films, which can be attributed to the effects of the SiO2 side walls during annealing.
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