Abstract

AbstractX-Ray Transmission and Reflection Topography settings have been used to perform stress and strain measurements in the epitaxial system GaAs/Ge : radius of curvature of the whole sample is obtained from the Lang (transmission) set-up ; tetragonal distortion in the layer is deduced from the Berg-Barrett (reflection) setup. Comparison of these results and correlation with dislocations densities estimated from topographs enable the elastic state of the system to be known.

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