Abstract

Researchers have focused on anti-perovskite Mn4N-based ferrimagnets as potential candidates for spintronic applications since these films have a small magnetization and exhibit perpendicular magnetic anisotropy. Magnetic compensation (or angular momentum compensation) in impurity-doped Mn4N at room temperature has attracted particular attention because the magnetization switching can be facilitated in the vicinity of such compensation compositions. In this study, we grew Mn4−xGaxN (x = 0.0–1.9) epitaxial thin films on SrTiO3(001) substrates by molecular beam epitaxy and evaluated their crystallinity and surface conditions. The magnetic properties of the grown films were also examined and a sign reversal of anomalous Hall resistivity and hysteresis loops was observed between x = 0.1 and 0.3 at room temperature by magneto-optical Kerr effect microscopy. X-ray magnetic circular dichroism measurement revealed that the magnetic moment of face-centered Mn at x = 0.3 was reversed to be parallel to that of Mn at corner sites, suggesting that the ferrimagnetic-ferromagnetic phase transition occurred with nonmagnetic Ga doping.

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