X-ray lithography using silicon nitride masks and the kodak 771 negative resist

Abstract

An experimental investigation of x-ray lithography using the BESSY synchrotron as radiation source, silicon nitride membranes with gold absorbers for masking and Kodak 771 as resist material, is presented. A resolution test pattern with line and separation dimensions down to 0.4 micron was transferred onto aluminum coated silicon wafers using x-ray exposure in order to study resolution and process compatibility of the Kodak 771 resist. It is shown that submicron patterns can be reproduced via a resist process and a standard single wafer RIE etch process in aluminum.