Abstract
X-ray lithography has been first proposed almost 50 years ago, and the related LIGA process around 25 years ago. It is therefore a good time to make an analysis of the technique, with its pros and cons. In this perspective article, we describe X-ray lithography’s latest advancements. First, we report the improvement in the fabrication of the high aspect ratio and high-resolution micro/nanostructures. Then, we present the radiation-assisted synthesis and processing of novel materials for the next generation of functional devices. We finally draw our conclusion on the future prospects of the technique.
Highlights
In the X-ray lithography (XRL) process, some materials, called resists, which are sensitive to X-rays and change their dissolution rate in a specific solvent after irradiation, are exposed to an X-ray source through a mask and can be patterned
XRL is the basic step of the LIGA process [German acronym of Lithographie Galvanoformung Abformung meaning lithography electrodeposition, molding (Becker et al, 1986)] that includes the electrodeposition of metal in the developed resist structure in order to obtain a mould or an electrode for a subsequent replication process like molding or electro discharge machining
We have reported and discussed the last developments of XRL and X-ray interference lithography (XIL) techniques, and the current research on the two fields for which they can be applied: the fabrication of high aspect ratio micro/nanostructures, and the radiation-assisted synthesis, processing, and modification of novel functional materials for their application in the future generation devices
Summary
In the X-ray lithography (XRL) process, some materials, called resists, which are sensitive to X-rays and change their dissolution rate in a specific solvent after irradiation, are exposed to an X-ray source through a mask and can be patterned. Kim et al (Kim et al, 2021) controlled the oblique angle of submicron-scale structures over centimeter-scale areas using an inclined X-ray exposure through a mask with slanted structures It is the limiting factor that hinders the resolution, and it could be overcome by the proper choice of a photoresist In this regard, organic photoresists do not satisfy the RLS requirements, while inorganic resists, having high absorption in XRL, would be promising candidates to surpass the existing barriers and reach the future technological nodes (Mojarad et al, 2015b). Coates et al (Coates et al, 2021) determined the effect of X-rays on the expansion coefficient of cadmium cyanide
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