X-ray line profile analysis studies on SnSe thin films deposited at different substrate temperatures

Abstract

Crystallite size and microstrain values for SnSe thin films of thickness 210–240 nm deposited on glass substrates kept at different high temperatures have been estimated using the method of variance and Fourier analysis of the X-ray diffraction line profiles. Variability of the interlayer spacings has also been studied. Growth of the high temperature phase of SnSe, usually found above 807 K, has been observed along with room temperature phase in films deposited at 472 K and above. It is observed that initially there is a growth of the crystallites. The r.m.s. strain and the mean fractional change in the interlayer spacing also initially increase with the temperature of the substrate. With the nucleation of the high temperature phase a fall in the crystallite size value accompanied by release of strain is observed.