Abstract
During X-ray irradiation of MOS devices, interface states as well as bulk electron and hole traps are generated at the Si SiO 2 interface and in the SiO 2 layer respectively. In this paper, we investigate the effect of X-ray irradiation on the electrical characteristics of 4.2 nm oxide and 4.4 nm oxynitride layers. It is shown that the bulk electron traps generated during irradiation lead to an increase of the gate current in the low gate voltage region, behaviour which can be attributed to trap assisted tunneling. From the analysis of time-dependent dielectric breakdown characteristics, it is demonstrated that the irradiation-induced bulk traps participate in the formation of the breakdown (percolation) path in the gate oxide layer.
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