Abstract
Thermally stimulated luminescence from X-irradiated Gd 2SiO 5:Ce, measured in the interval 300–700 K, is characterized by a main glow peak near 390 K and weaker maxima near 420, 490 and 550 K. Analysis of the well-resolved principal peak shows that it obeys first-order kinetics with thermal activation energy 1.16 eV and frequency factor 3.17×10 14 s −1 . The glow curve and peak parameters are similar to those found in cerium-doped M 2SiO 5 ( M=Lu, Y, Yb, Er) and undoped Lu 2SiO 5. For these latter samples, it has previously been shown that the defect responsible for the principal peak (∼375 K) is intrinsic and common to these C2/c-structured oxyorthosilicates. The present results demonstrate that the defect is also common to Gd 2SiO 5:Ce, which possesses P2 1/c symmetry, and is likely associated with the configuration of oxygen ions in the vicinity of the host lanthanide ions. An oxygen ion vacancy is a plausible candidate for this defect.
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