Abstract
SiO2xerogels prepared by a sol–gel process followed by sintering at 350–1100°C were irradiated with 30-keV x-rays at a dose rate of 80 R/s. The room-temperature electron spin resonance (ESR) spectra of the xerogels showed signals arising from radiation-induced intrinsic defects (E " centers and terminal oxygens) and organic radicals. By recording ESR spectra in a vacuum of ∼10–2Pa, surface E " centers differing in relaxation time from the volume centers were identified for the first time. The ESR signal from the E " centers was measured as a function of x-ray dose. The possible mechanisms for the formation of E " centers under x-ray irradiation are discussed.
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