Abstract
The structural in situ characterization of heteroepitaxial growth with x-rays has proven to be able to track details and quantify parameters generally inaccessible to other non-destructive methods applied during growth. The important increase in the availability of synchrotron radiation over the last 10 years has led to a variety of instrumental developments allowing for optimum growth conditions during x-ray scattering experiments. As one of the most studied systems, Ge on Si(0 0 1) serves as an excellent example for an in-depth analysis of the complete epitaxial process. The different growth phases as seen with x-rays are presented, and a quantification of a variety of parameters is explained.
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