Abstract
AbstractA focusing Laue diffractometer is used to analyze the strain field in silicon. The source for this so called strain field diffraction (SFD) setup is a high energy X‐ray tube. In the present work this setup is used to monitor the strain generated by growing oxygen precipitates (Bulk Micro Defects, BMDs) in situ at temperatures up to 1000 °C. By choosing appropriate thermal treatments a correlation of the SFD signal with BMD parameters gained with conventional analytic techniques (FT‐IR, infra red light scattering, TEM) is established. From this, the detection limit of the SFD setup for BMDs is determined at a diameter of 7 nm and a density of 1013 cm−3. This range is only covered by TEM so far. Further, the diffracted intensity provides a measure for the level of precipitation occurred.
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