X-ray image resolution of carbon nanotube emitters grown with resist-assisted patterning process

Abstract

We obtained X-ray images using carbon nanotube arrays. The electron emitter was fabricated using the resist-assisted patterning (RAP) process. The X-ray image was obtained with a current of 300 μA at an anode bias of 30 kVp. The emitter had a pattern width of 5 μm and a pitch of 40 μm producing a turn-on field of 1.5 V/μm with a field emission current of 10 μA/cm 2. The resulting X-ray image clearly shows micrometer scale lines on an integrated circuit chip bonded in a printed circuit board.