Abstract
Amorphous silicon layers formed by implantation of 24-keV hydrogen ions into SiO2/Si and Si with doses of 2.7×1017 and 2.1×1017 cm−2, respectively, were studied using ultrasoft X-ray emission spectroscopy with variations in the energy of excitation electrons. It is ascertained that the surface silicon layer with a thickness as large as 150–200 nm is amorphized as a result of implantation. Implantation of hydrogen ions into silicon coated with an oxide layer brings about the formation of a hydrogenated silicon layer, which is highly stable thermally.
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