X-Ray Emission from Thin Films on a Substrate - Calculation and Experiments

Abstract

Monte Carlo simulation of electron transport in solids is widely used in electron microscopy, spectroscopy and microanalysis. The reliability of physical models incorporated in a Monte Carlo code is usually checked by comparing with experimental results. Elastic or inelastic collisions are usually considered as the basic interactions of electrons with atoms. In our Monte Carlo code the single scattering model is employed for simulation of X-ray emission from thin films of Au on the Si substrate. The electron beam energy was in the range 10–30 keV, the take-off-angle was 40°. The simulated values of X-ray production were calculated in our Monte Carlo code using several models of ionisation cross-sections. For the emitted intensities the depths of inelastic collision and X-ray absorption were taken into account, then the k-ratios were calculated. These data were compared with experimental values of k-ratios calculated from X-ray intensities of Au M and Au L characteristic lines. We followed mainly the dependence of the k-ratios of the film element on film thickness. The film thickness was in the range 0.05–1 µm. Reasonably good agreement was found for dependences of X-ray intensity on film thickness in the whole energy range and for both lines, especially for Powell’s model of the ionisation cross-section.