X-ray diffuse scattering from extended microdefects of orthorhombic symmetry for Si single crystals

Abstract

The displacement field of a crystal lattice, in the continuous media approximation, caused by extended microdefects of rectangular parallelepiped shape, is considered. X-ray diffuse scattering from the defect core as well as the long-range displacement field is analyzed. A theoretical expression for the intensity of X-ray diffuse scattering resulting from randomly distributed microdefects of orthorhombic symmetry is presented using the kinematical approximation of X-ray statistical diffraction theory. The computer simulations of the isointensity contours for two sets of defect parameters are performed. A way of obtaining the defect parameters by fitting the computer simulations to the experimental data is proposed.