X-ray Diffraction Topography at a Synchrotron Radiation Source Applied to the Study of Bonded Silicon on Insulator Material

Abstract

th birthday New possibilities of X-ray diffraction topography offered by the modern synchrotron radiation sources for the investigation of wafer-bonded material are demonstrated. They allowed detecting defects and long-range strain fields at and close to the bonding interface. A quantitative estimation of the deformation of the region near to the bonding interface was possible e.g. by investigating focussing distances and dominant spatial frequencies of contrast patterns (often in the order of 200 µm). In typical wafer bonded material the maximum bonding-induced inclination of the lattice planes was in the order of 10 arcsec and the approximate amplitude of the deformation in the order of 1.5 nm. The sensitivity of the presented methods to characterize the influence of various process parameters was demonstrated.