Abstract
AbstractIn the search for Si‐ and C‐based crystalline phases in low‐energy ion implanted and electron‐beam annealed Si surface layers, X‐ray diffraction (XRD) measurements were performed at grazing incidence on samples of large SiC nanocrystals grown on a 90 nm thick Si layer containing C atoms. Diffraction patterns and reciprocal space maps did not reveal XRD patterns originating from the nanocrystals or the implanted layer, but did show that distortions of the Si crystal structure were introduced into the implanted layer. After annealing, the strain in the implanted layer is reduced, possibly by carbon atoms that have moved to locations close to dislocations and dislocation loops. This investigation underpins the growth theory of the SiC nanocrystals on Si, with carbon atoms migrating to form the nanostructures. Copyright © 2007 John Wiley & Sons, Ltd.
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