X-Ray Diffraction Study of Heteroepitaxy of MOCVD Grown TiO2 and VO2 Films on Sapphire Single Crystals

Abstract

A four-circle diffractometry technique is used to determine the heteroepitaxial relations of VO 2 and TiO 2 thin films grown by an MOCVD technique on sapphire (0001) and (1120) surfaces. The use of a reflective geometry eliminates special sample preparation of the sample for the x-ray diffraction measurements. The distribution of epitaxial domains is found to depend strongly on the symmetry of the underlying substrate.