Abstract
A variety of surface morphologies can be formed by controlling kinetic parameters during heteroepitaxial film growth. The system reported is a ${\mathrm{Si}}_{0.7}{\mathrm{Ge}}_{0.3}$ film grown by molecular beam epitaxy at $550\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ and a $1\phantom{\rule{0.3em}{0ex}}\mathrm{\AA{}}∕\mathrm{s}$ deposition rate, producing quantum dot molecule (QDM) structures. These nanostructures are very uniform in size and shape, allowing strain mapping and chemical composition evaluation by means of anomalous x-ray diffraction in a grazing incidence geometry. Tensile and compressed regions coexist inside QDMs, in accordance with the finite-element calculations of lattice relaxation. The Ge content was found to vary significantly within the structures, and to be quite different from the nominal composition.
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