Abstract
ZnO thin films have been deposited on SiO2 -Si and Al-SiO2 -Si substrates by reactive sputtering. X-ray diffractometry was used to determine microstructural disorder parameters in ZnO thin films with strong preferred c-axis orientation. The influence of Al and Al2O3 buffer layer on preferred c-axis orientation and microstrain of crystallites was also studied. The microstrains and domain size showed only a small dependence on the preference of a buffer layer, but they depend on the thickness of ZnO thin film. The stress gradient along the c-axis was observed in all of studied samples.
Highlights
Thin films of metallic conductors, semiconductors and insulators are the basic materials for modern electronic devices
Microstructural characterization of thin films is very important for the design and improvement of electronic devices [1]
Because Zinc Oxide has a hexagonal close-packed wurtzite structure, polycrystalline thin films prepared by different techniques have usually preferential orientation of their grains in the [001]
Summary
Thin films of metallic conductors, semiconductors and insulators are the basic materials for modern electronic devices. These films should possess specific mechanical, electrical, magnetic or optical properties which are strongly influenced by the microstructural qualities of the films such as crystalline or amorphous state, crystallographic orientation, crystallite size, strain and stresses. Microstructural characterization of thin films is very important for the design and improvement of electronic devices [1]. Due to their small dimensions perpendicular to the surface, the microstructure of thin films cannot be characterized by methods developed for the bulk materials. Various methods of surface physics are frequently applied to thin films. Among the analytical methods especially suitable for thin films, X-ray diffraction plays an important role since it is nondestructive, noncontact and highly quantitative
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