Abstract
An extended kinematical approach is applied to the simulation of X-ray diffraction spectra from triple-layered quantum-well structures. A problem caused by a thick substrate is solved by using the exponentially decaying amplitude of the incident beam due to both extinction and absorption effects. The interface roughness is taken into account by statistical averaging of the scattering amplitudes. The analytic expressions obtained well describe the experimental rocking curves and are used to derive the parameters of GaAs/GaInAs/GaAs quantum wells a few nm thick grown on the (1 1 1)-oriented GaAs substrates.
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