X-ray diffraction and thermodynamics kinetics of SiB6 under gamma irradiation dose

M N Mirzayev,N V Tiep,S H Jabarov,S Biira,T T Thabethe,E B Asgerov,R N Mehdiyeva

doi:10.1007/s12633-018-0039-2

Abstract

The silicide hexaboride (B6Si) was irradiated with 60Co at room temperature to study the structural changes and weight kinetics. The B6Si samples were irradiated using a gamma source with a dose rate (D) of 0.27 Gy/s. At adsorption dose range of 9.7, 48.5, 97, 145.5 and 194 kGy. The samples were analysed using X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS) to study the microstructural and composition changes. The XRD results showed the crystalline structure for the sample before and after irradiation (with gamma irradiation dose 9.7, 48.5 and 97 kGy). Amorphization of the sample began at the gamma irradiation dose of 145.5 kGy. Increase in gamma irradiation dose had an inverse effect on the activation energy and had a directly proportional effect on the lattice volume.

Highlights

Different boron compounds such as BSin, BnC, SiBC, BC-ZrC and BSi-ZrC are used in nuclear technology
The results showed that under atmospheric pressure and room temperature, the B6Si has an orthomorphic symmetry and crystalline structure of Pnnm spatial group
A change in the peak intensity on the X-ray diffraction (XRD) pattern for the samples which were gamma irradiated with an adsorption dose range of 0 ≤ D ≤ 97 kGy was observed

Summary

Introduction

Different boron compounds such as BSin, BnC, SiBC, BC-ZrC and BSi-ZrC are used in nuclear technology. Current studies are focusing on the investigating the physical and mechanical properties of B6Si compounds for use in nanotechnology application [14]. These studies focused on high thermodynamic parameters [7, 19], 20 GPa pressure resistance of B-Si binary system and little friction coefficient of the ceramic. Africa 5 Department of Physics, Busitema University, P.O Box 236, Tororo, Uganda systems which are used to create B6Si compound with metal oxides in the aquatic environment [20]. There are two major causes for the structural degradation of silicide hexaboride compound namely: Oxidation with influence of temperature and amorphous process with gamma irradiation. The gamma irradiated samples create active centres and defects in the Silicon (2019) 11:2499–2504

Methods

Results

Conclusion