X-ray detection efficiency of a silicon surface barrier detector using synchrotron radiation in the 0.06–0.9 keV energy region

Abstract

Using synchrotron radiation from 0.056 to 0.900 keV, the detection efficiency of a silicon surface barrier (SSB) detector. η SSB, has been investigated. The experimental data are compared with the theoretically calculated results using the detector parameters of the depletion layer, the dead layer and the electrode. As a whole, the data points agree well with the theoretical results except for an oscillatory structure for the 0.07–0.17 keV region. In this energy region, sharp edge structures in η SSB are observed near the Al L II and L III absorption edges as well as the Al L I edge. In particular, this structure in η SSB near the Al L I edge is accompanied by an oscillatory behaviour like an X-ray absorption near-edge structure (XANES) on the high energy side of the edge.