Abstract

X-ray beams at energies tuned slightly below that of exact backscattering (extreme conditions, where X-ray back-diffraction is almost extinguished – called residual XBD) are better focused if the experiment is carried out at lower energies in order to avoid multiple-beam diffraction effects. Following previous work by the authors [Hönnicke, Conley, Cusatis, Kakuno, Zhou, Bouet, Marques & Vicentin (2014). J. Appl. Cryst. 47, 1658–1665], herein efforts are directed towards characterizing the residual XBD beam of an ultra-thin Si 220 crystal (UTSiXTAL) at ∼3.2 keV. To achieve the residual XBD condition the UTSiXTAL was cooled from 310 to 273 K. The results indicate that under this extreme condition the energy resolution can be further improved. Issues with the energy resolution measurements due to incoming beam divergence and the ultra-thin crystal flatness are discussed.

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