Abstract
We demonstrate the use of Fourier transform infrared (IR) spectroscopy for midinfrared emission measurements following x-ray or electron excitation. Spectra from an InAs low band-gap semiconductor film, which emits in the IR from 3000 to 3400 cm(-1), are presented. There is good agreement between the present results and previously published laser-excited spectra. Using focused beams, it should be possible to perform sub-diffraction-limited IR imaging. In addition, simultaneous structural and electronic analysis could be performed using the x-ray or electron excitation probes.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
