Abstract
We report on the simultaneous, molecular beam epitaxy growth of GaAs on GaAs(001) and GaAs(111)B substrates at low temperatures. The crystallinity of the low-temperature GaAs layers was assessed using a double-crystal x-ray diffractometer and a wide-angle diffractometer with a rotating specimen stage. Layers were grown at 200 and 250 °C to a thickness of 3 μm on both (001) and (111) orientated substrates and an additional 3 μm layer was grown on GaAs(111)B at 300 °C. Double-crystal diffractometry confirmed the presence of a single crystalline layer, with a growth-temperature-dependent excess As concentration, on the (001) substrates. On the (111) substrates, only a polycrystalline layer was observed. A possible explanation for these observations based on growth surface roughening is presented.
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