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Abstract
Abstract Electronic and structural changes induced by the charge storage reaction due to proton insertion in sputtered iridium oxide films (SIROFs) have been investigated by in situ X-ray absorption spectroscopy at the L3 edge of iridium atoms in 1 M H2SO4. The iridium valency is shown to increase from 3 to 3.85 when the potential varies from −0.2 to +1 V(SCE). In XANES spectra, the white line peak height and energy position decrease with insertion. The fine structures of the spectra have been analyzed and simulated in view of structural parameter extraction. A correspondence curve is established between the interatomic Ir–O distance in the first shell and the iridium valency. A strong decrease of this distance is observed with the oxidation state of iridium accompanied by a conspicuous decrease of the Debye–Waller factor.
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