Abstract
Ce <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> doped lutetium aluminum garnet (Ce:Lu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Al5 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sub> /Ce:LuAG) Polycrystalline scintillation films have been fabricated on silicon (111) substrates by Pechini sol-gel method combined with spin-coating technique. Photoluminescence (PL) spectra and X-ray absorption fine structure (XAFS) analysis were used to characterize the as-prepared films. X-ray absorption near-edge structure (XANES) spectra of the Ce-L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> edge demonstrated that the Ce ion in Ce:LuAG films synthesized in air exhibited two charge states, +3 and +4 valence respectively. By post annealing in H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> atmosphere, the relative content of Ce <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> ions increased from 46.3% to 80.5% for 1.0 mol%Ce:LuAG films, which corresponded with the enhancement of luminescence intensity of this samples.
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