Abstract
By employing pulsed-laser deposition, thin-film GaAs on glass has been deposited. X-ray analysis showed that the material has a polycrystalline texture with a crystal size of 58 nm. The absorption of the film has been measured by standard constant photocurrent measurements and the photocurrent itself with the lock-in technique. Absorption and photocurrent have been straightforwardly modelled with the crystalline density of state function and Urbach's tail. The work reveals the capability of pulsed-laser deposition to form high-quality GaAs films on glass for optical applications.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
