X-Parameters Based Characterization and Compact Modeling of SiGe HBT Linearity

Abstract

This paper presents an X-parameter based approach to characterizing and compact modeling of SiGe HBT linearity. Removing RF source distortion using X-parameter measurements significantly increases measurement accuracy in highly linear common-base SiGe HBTs. X-parameters simulated using Mextram 505.0 are compared with measurements for the first time. To a large extent, our model accurately captures nearly all the X-parameters for a large range of biasing emitter current and collector-base voltage.